Method of the adjustable matching map system in lithography

ABSTRACT

A method is provided for improving layer to layer overlay of a second layer pattern on a first layer pattern formed in a substrate. A plurality of first reference marks is placed inside a pattern area on a first layer mask which is used to form the first layer pattern. A plurality of second reference marks is placed on a second layer mask which is used to form the second layer pattern and in which one second reference mark is matched with a first reference mark having the same (x,y) coordinates. Reference mark placement in the resulting first and second layer patterns is determined by metrology to determine an x-deviation and a y-deviation for each matched pair of reference marks. A correction algorithm is then used to calculate adjustments in exposure tool settings for improved overlay of the second layer pattern on the first layer pattern in subsequent exposures.

CROSS REFERENCE TO RELATED APPILCATIONS

This application is a division of pending U.S. patent application Ser.No. 10/725,810, filed Dec. 2, 2003 and entitled “METHOD OF THEADJUSTABLE MATCHING MAP SYSTEM IN LITHOGRAPHY,” which is herebyincorporated by reference.

FIELD OF THE INVENTION

The invention relates to a method of fabricating an integrated circuitin a semiconductor device. More particularly, the present inventionrelates to a method of more accurately aligning a second layer patternformed in a photoresist layer on a first layer pattern formed in asubstrate.

BACKGROUND OF THE INVENTION

Photoresist patterning is a key step in the formation of integratedcircuits in semiconductor devices. A photoresist layer is typically spincoated on a substrate and patternwise exposed by employing an exposuretool and a mask that contains a device pattern. The mask may becomprised of an opaque material such as chrome on a transparentsubstrate like quartz. Other masks called phase shifting masks haveregions that transmit light which is 180° out of phase with lighttransmitted through an adjacent region. Radiation is transmitted througha mask to selectively expose portions of the photoresist layer which arelater developed in a media such as an aqueous base solution to produce aphotoresist pattern. For a positive tone photoresist layer, exposedportions are removed while unexposed portions remain on the substrate.With a negative tone photoresist, exposed portions are typicallycrosslinked and remain on the substrate while unexposed portions arewashed away by the developer.

Each technology generation or node in the microelectronics industry isassociated with a particular minimum feature size in the photoresistpattern. As technology advances have been continuous in recent years,the minimum feature size requirement has rapidly shifted from 250 nm to180 nm and then to 130 nm. New photoresists, masks, and exposure toolsare now being implemented for 100 nm and sub-100 nm technology nodes.

An important aspect of the photoresist patterning process is theaccurate placement of a second layer pattern on a first pattern thatformed in a substrate. For example, in a damascene process, trenchesformed in a second photoresist layer are overlaid on vias in a firstpattern that has been etched into a dielectric layer. As new technologynodes are introduced, the overlay specification for printing a secondlayer pattern over a first pattern has been tightened to 65 nm or evenless in some cases. There are two major factors contributing to thisoverlay error which is also called layer to layer error. One is opticalprojection system error and the other is mask to mask error.

In the current practice of evaluating mask to mask error, referencemarks are typically placed on a mask outside the pattern and theforbidden area. As shown in FIG. 1, a conventional mask 1 has a patternarea 2 comprised of opaque and transparent regions in a center locationwhich is surrounded by a forbidden area 3 and is used to form a firstpattern in a substrate. The outer region 4 of the mask 1 has opaque ortransparent reference marks 5 a-5 f that are not printed during apatterning process. Similarly, a second mask (not shown) which is usedto print a second layer pattern has a matching set of reference markslocated in an outer region that are at similar (x,y) coordinates to thereference marks 5 a-5 f on the mask 1. A metrology tool is used toobtain mask to mask overlay without involving photoresist exposures.Thus, the position of each of the reference marks 5 a-5 f on the mask 1and the position of the reference marks on the second mask are measuredand an offset in terms of an overlay error in the x-direction and in they-direction is calculated for each matched pair of reference marks. Theoffset data is used to make a correction in exposure tool settings whenusing the mask 1 and the second mask in subsequent patterning steps sothat the overlay of a second layer pattern on a first pattern isoptimized.

The resulting mask to mask error map depicted in FIG. 2 is simplifiedcompared to actual practice but indicates that the same correction isapplied to all areas of the mask in region 6 including the devicepattern area 2 based on the offset of marks 5 a, 5 b to the matchingreference marks on the second mask. Likewise, only one correction ismade for all areas of the mask in region 7 based on measurements ofreference marks 5 c, 5 d and the matching reference marks on the secondmask and only one correction is made in region 8 based on themeasurements of marks 5 e, 5 f and the matching reference marks on thesecond mask. For advanced technologies that are approaching nodes of 100nm or less, the location of reference marks outside the device patterndoes not provide a second layer pattern to first layer pattern overlayaccuracy that satisfies current overlay specifications. Therefore, a newmethod is needed that enables alignment to within about 45 nm of atargeted position.

In U.S. Pat. No. 5,044,750, a method is mentioned for checking alignmentof a pattern in a photoresist layer. Geometric patterns in a diamondshape are added to a mask in a progressively overlapping edge to edgeorientation with increments of 0.05 microns in distance between the endsof the diamonds. The diamond shapes can be oriented in both x and ydirections in order to provide full (x,y) dimension accuracy.

U.S. Pat. No. 6,352,323 provides a method of aligning a mask level tomarks in two previous layers. An algorithm with weighting factors isapplied to determine overlay offsets in x and y directions.

An in-situ overlay method is described in U.S. Pat. No. 4,929,083. A keystep is to monitor the output signal generated by a photodetector inresponse to light angularly radiated by one or more test patterns on areusable calibration wafer while the test pattern is being exposed to anaerial image of a matching calibration mask. This process seems bestsuited for setting up a tool for manufacturing. During actualproduction, mask to mask error would still have to be evaluated for finecorrections.

In U.S. Pat. No. 6,288,556, electrical resistance is measured todetermine the amount of misregistration between two patterned levels.Electrical resistance is measured between terminals provided in firstand second level patterns that have been etched into a substrate. Acurrent is applied between two terminals and voltage is monitoredbetween two different terminals in a pattern.

SUMMARY OF INVENTION

One objective of the present invention is to provide a method ofdetermining mask to mask error that improves the accuracy of overlayinga second layer pattern on a first pattern on a semiconductor substrate.

A further objective of the present invention is to provide a method thatgenerates a reference mark within a device pattern and also includes ameans of removing the mark from a mask and from a photoresist layer.

A still further objective of the present invention is to provide amethod that reduces layer to layer overlay error for printing a secondlayer pattern on a first layer pattern on a substrate.

These objectives are achieved in a first embodiment by providing asubstrate with a first photoresist layer formed thereon. The firstphotoresist layer is exposed with a first patterned mask having a firstreference mark with an essentially square shape formed by a first pairof parallel lines and a second pair of parallel lines that areperpendicular to the first pair of parallel lines. In one embodiment,the first reference mark is comprised of chrome on the first mask andthe first photoresist is a positive tone photoresist. In an alternativeembodiment, the reference mark is a clear region on the mask and a firstreference mark and pattern is formed in a negative tone firstphotoresist layer. The resulting first photoresist pattern istransferred into the substrate with a plasma etch process and the firstphotoresist layer is removed. A second photoresist layer is then coatedon the patterned substrate and is exposed with a second mask having asecond reference mark which is an essentially square shape comprised ofa first pair of parallel lines and a second pair of parallel lines thatare perpendicular to the first pair of parallel lines. The secondreference mark is smaller than the first reference mark and is designedto be printed in the second photoresist layer such that the secondreference mark is overlaid on the first reference mark and when observedfrom a top-down view fits inside the first reference mark in the firstpattern and does not overlap any of the lines in the first pattern.

In one embodiment, the first and second reference marks are comprised ofchrome and are located in clear regions on the first and second masks,respectively, that are not near any other chrome features. The numberand location of the reference marks may be designated by the customer orapplied in a design that is selected by the mask maker. Therefore, aplurality of first reference marks equivalent to the first referencemark may be placed on the first mask and a plurality of second referencemarks equivalent in shape and size to the second reference mark areplaced on the second mask. Each second reference mark on the second maskis matched with a first reference mark at a corresponding location or(x,y) coordinate on the first mask. Although the first and secondreference marks are preferably placed inside the patterned area of thefirst and second masks, respectively, some of the first and secondreference marks may be located outside the forbidden area on a mask inorder to determine mask to mask error in another embodiment of theinvention.

A pattern in a photoresist layer is typically printed at ¼ or ⅕ the sizeof the corresponding pattern on a mask. Thus, the mask pattern isusually exposed a plurality of times in a stepping movement to produce aplurality of adjacent exposure fields that together cover a majority ofthe surface area on a substrate. After the second photoresist isdeveloped to generate a second pattern with at least one secondreference mark in each printed exposure field, the position of a secondreference mark in the second photoresist pattern is determined relativeto a matching first reference mark in the substrate by a scanningelectron microscope (SEM) with a top-down view which is commonlyreferred to as a CD-SEM. The offset in terms of x and y deviation of thesecond reference mark from a center point in a matching first referencemark is measured according to a grid that may be a “m”×“n” array ofsquares, for example, when overlaid on a substrate surface. Since anexposure field is usually larger than a grid square, more than onemeasurement per exposure field is typically performed.

The measurement results for each grid square are inputted into acorrection algorithm that adjusts exposure tool settings such as fieldrotation, magnification, x and y stage scale, orthogonality, and offsettranslation for each exposure field in subsequent exposures with thesecond mask. The exposure tool adjustments will enable a more accurateoverlay of the second photoresist pattern on the first pattern whenprocessing subsequent substrates.

In the embodiment in which a chrome second reference mark on a secondmask is used to print a second pattern in a positive photoresist layer,the second (positive) photoresist layer is then exposed through a thirdmask with clear regions in the same locations of the second referencemarks in the second mask. The second photoresist layer is developed asecond time to remove the second reference marks and leave the desireddevice pattern in the second photoresist layer.

In a second embodiment, a Leica LMS IPRO tool or an equivalent isemployed to obtain mask to mask overlay directly without involvingphotoresist exposures. The metrology tool uses reflected non-coherentlight to determine the x,y coordinates of a feature such as a chromereference mark on a mask. Thus, the position of each of the firstreference marks on the first mask and each of the second reference markson the second mask is obtained by a Leica LMS IPRO tool or equivalent.An overlay grid is employed as in the first embodiment and the offsetresults in terms of (x,y) deviations are directly inputted into analgorithm that is used to calculate the appropriate adjustments inexposure tool parameters to produce the desired overlay of the secondpattern layer on a first pattern generated from the first mask.

Once the metrology measurements are taken and a second photoresist layeris patterned on a first pattern in a substrate to verify that the LeicaLMS IPRO overlay measurements are acceptable, then the second referencemarks on the second mask and the first reference marks on the firstlayer mask may be removed. For example, a photoresist on the first layermask is patterned by a pattern generator machine such as an e-beam toolto expose portions of the photoresist that correspond to the (x,y)coordinates of the underlying first reference marks. The photoresist isdeveloped to form clear regions that completely uncover the firstreference marks but not adjacent device areas. A wet or dry etch processremoves the exposed first reference marks. The photoresist layer isstripped and the modified first layer mask may then be used to expose afirst photoresist layer on subsequent substrates.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a top-down view of a conventional mask showing a patternedregion, a forbidden region and location of reference marks outside thepatterned region.

FIG. 2 shows a layer to layer error map produced by a conventionalmethod of measuring reference marks outside a printed pattern.

FIG. 3 is a top-down view of a first layer mask having reference marksinside the patterned area according to a method of the presentinvention.

FIG. 4 shows a portion of the first layer mask in FIG. 3 with anenlarged picture of one of the first reference marks.

FIGS. 5 a-5 b are cross-sectional views of a first reference mark formedin a first layer pattern on a substrate.

FIG. 6 is a top-down view of a second layer mask having second referencemarks according to a method of the present invention.

FIG. 7 depicts a portion of the second layer mask in FIG. 6 and shows anenlarged picture of one of the second reference marks.

FIG. 8 is a cross-sectional view showing a second layer mask with asecond reference mark aligned over a first reference mark in asubstrate.

FIGS. 9 and 10 are a cross-sectional view and top-down view,respectively, showing some overlay error has occurred in forming asecond layer pattern with a second reference mark over a first patternwith a first reference mark.

FIG. 11 a is a grid that is overlaid on a substrate and used to generatea layer to layer error map in FIG. 11 b that is produced by inputtingmeasurements according to a method of the present invention.

FIGS. 12 and 13 are top-down views of a third mask that has clearopenings which are used to remove the second reference marks in a secondlayer pattern.

FIGS. 14 and 15 are cross-sectional views depicting how the opening inthe third mask is used to remove a second reference mark in a secondlayer pattern.

FIG. 16 is a mask to mask error table comprised of 4 rows and 4 columns.

FIG. 17 is a top-down view of a conventional mask showing referencemarks that are used to make an x-magnification correction.

FIG. 18 is a top-down view of a mask according to the present inventionthat has reference marks in a device area that are used to make anx-magnification correction.

DETAILED DESCRIPTION OF THE INVENTION

The present invention is a method of fabricating an integrated circuitwhich enables the placement of a second layer pattern on a first layerpattern with high accuracy that satisfies overlay requirements foradvanced technologies. In a first embodiment, a method that improveslayer to layer overlay of a photoresist layer on a patterned substratewill be described. In a second embodiment, a method for improving maskto mask overlay is described. The present invention is also a mask setinvolving a first layer mask having a first reference mark inside adevice pattern, a second layer mask having a second reference markinside a device pattern, and a third mask used to remove a secondreference mark from a second layer pattern in a photoresist layer. It isunderstood that the term “pattern” may refer to a pattern on a mask, ina photoresist layer, or in a substrate. For the purpose of thisinvention, a first layer pattern generally refers to a pattern that istransferred from a first layer mask into a first photoresist layer andsubsequently etched into a substrate. A second layer pattern is intendedto mean a pattern that is transferred from a second layer mask into asecond photoresist layer wherein the second layer pattern is overlaid onthe first layer pattern in the substrate.

In the first embodiment, a method is provided for determining theoverlay error of a second layer pattern on a first layer pattern in asubstrate. The error measurements are used to make corrections inexposure tool settings that will generate a more accurate placement ofthe second layer pattern on the first layer pattern in subsequentsubstrates. Referring to FIG. 3, a first layer mask 20 is shown that iscomprised of an inner first layer pattern area 13, a chrome forbiddenarea 14, and an outer region 15. The outer region 15 may be opaque ortransparent depending on the type of mask. A key feature of theinvention is that first reference marks 10 b, 10 c, 11 b, 11 c areinserted within the first layer pattern area 13 in order to provide amore accurate determination of layer to layer overlay in a subsequentstep. Conventional masks only have reference marks in a region 15outside the forbidden area 14.

Note that other first reference marks 9 a-9 d, 10 a, 10 d, 11 a, 11 d,and 12 a-12 d may be placed in the outer region 15 and their use willbecome apparent during a description of mask to mask overlay in a secondembodiment. Although a 2×2 array of first reference marks is shownwithin the first layer pattern area 13, optionally, an “m”×“n” array maybe used. Alternatively, a different sized array of first reference marksmay be used instead of the 4×4 array that covers the first layer mask20.

In one embodiment, the first reference marks are comprised of chromethat is placed on a transparent region of a first layer mask 20. Thefirst reference marks are placed at least 2 microns from any patternfeatures in the first layer pattern area 13. In an alternativeembodiment in which the first layer mask is an attenuated or alternatingphase shifting mask, the first reference marks are constructed so thatlight passing through the marks is transmitted 180° out of phase withlight that passes through an adjacent region of the first layer mask 20.In another embodiment, the first reference marks may be clear regions ofthe first layer mask 20 that are surrounded by chrome.

Referring to FIG. 4, in the exemplary embodiment, the first referencemarks are comprised of chrome on a transparent substrate. A portion 16of the first layer pattern area 13 is shown that includes the firstreference mark 11 c. Note that all first reference marks have the samesize and shape as the first reference mark 11 c. The first referencemark 11 c is preferably comprised of a first pair of parallel chromelines 17 a, 17 c and a second pair of parallel chrome lines 17 b, 17 dthat are perpendicular to chrome lines 17 a, 17 c and form anessentially square shape having corners E, F, G, H. The length of oneside D1 between corners E and F, for example, is about 80 microns. Thewidth D2 of each of the chrome lines 17 a-17 d is about 8 microns.

Referring to FIG. 5 a, a substrate 40 is depicted that is typicallymonocrystalline silicon and may have active and passive devices (notshown). A first layer 42 is formed on substrate 40 and may be adielectric layer, for example. The first layer mask 20 is used topattern the first layer 42 by a conventional method of patterning aphotoresist layer (not shown) on the first layer 42 and transferring thepattern into the first layer with a plasma etch process. When a positivetone photoresist is exposed, a developer solution removes the exposedregions while unexposed regions remain on the substrate. For a negativetone photoresist, the exposed regions remain on the substrate afterdevelopment and the unexposed regions are removed. After the etchtransfer step, the remaining photoresist layer is removed by an ashingmethod or an organic stripper solution. As a result, the pattern in thefirst layer mask 20 and the first reference marks within the first layerpattern area 13 are formed in the first layer 42.

In the exemplary embodiment, a portion of the first layer 42 thatincludes openings 43, 44 corresponding to lines 17 a, 17 c,respectively, on the first layer mask is shown. Openings 47, 48corresponding to lines 17 b, 17 d, respectively, on the first layer mask20 are also formed in the first layer 42 but are not pictured in thisview. In this example, a chrome line 17 a, 17 c on a first layer mask 20may be used to expose a negative tone photoresist on the first layer 42and subsequently form openings 43, 44. In the alternative embodimentwhere first reference marks are transparent lines surrounded by chrome,transparent lines with similar size and shape to lines 17 a, 17 c on afirst layer mask 20 are used to pattern a positive tone photoresist onthe first layer 42 and subsequently form the openings 43, 44.

It is understood that the pattern projected by the exposure tool istypically ¼ or ⅕ of the size of the first layer pattern on the mask.Therefore, a first reference mark which is an 80×80 micron square on thefirst layer mask 20 is reduced to a 20×20 micron square first referencemark in a first layer 42 on a substrate 40 when the exposure tool has4:1 reduction optics. For 5:1 reduction optics, a first reference markthat forms an 80×80 micron square on the first layer mask 20 wouldbecome a 16×16 micron square size in the first layer 42. In other words,the first reference mark as printed in first layer 42 has a width D4 of20 microns and a width D3 for an opening 43 or 44 of 2 microns in theexample where an 80 micron square first reference mark on the firstlayer mask 20 is exposed by an exposure tool with 4:1 reduction optics.Furthermore, the first layer pattern is typically “stepped” or printedin a plurality of adjacent exposure fields across the substrate 40 as isappreciated by those skilled in the art so that a first reference mark11 c, for instance, is reproduced a plurality of times in a first layer42.

In an alternative embodiment shown in FIG. 5 b, lines 43 a, 43 bcorresponding to lines 17 a, 17 c, respectively, on the first layer mask20 are formed in the first layer 42. In this case, a chrome line 17 a,17 c on a first layer mask 20 may be used to expose a positive tonephotoresist on the first layer 42 and subsequently form lines 43 a, 44a. In the alternative embodiment where first reference marks aretransparent openings surrounded by chrome, transparent openings withsimilar length and width to lines 17 a, 17 c on a first layer mask 20are used to pattern a negative tone photoresist on the first layer 42and subsequently form lines 43 a, 44 a.

Referring to FIG. 6, a second layer mask 30 is shown that is comprisedof an inner second layer pattern area 23, a chrome forbidden area 24,and an outer region 25. The outer region 25 may be opaque or transparentdepending on the type of mask. Another key feature of the invention isthat second reference marks 20 b, 20 c, 21 b, 21 c are inserted withinthe second layer pattern area 23 in order to provide a more accuratedetermination of layer to layer overlay in a subsequent step. Note thatother second reference marks 19 a-19 d, 20 a, 20 d, 21 a, 21 d, and 22a-22 d may be placed in the outer region 25 and their use will becomeapparent during a description of mask to mask overlay in a secondembodiment. Conventional masks only have reference marks in a region 25outside the forbidden area 24.

Although a 2×2 array of second reference marks is shown within thesecond pattern layer area 23, optionally, an “m”×“n” array may be used.Alternatively, a different sized array of second reference marks may beused instead of the 4×4 array that covers the second layer mask 30.However, it is important that the same size array of first and secondreference marks are employed. Furthermore, each second reference markhaving an (x,y) coordinate on the second layer mask 30 is matched with afirst reference mark having the same (x,y) coordinate on the first layermask 20.

In one embodiment, the second reference marks are comprised of chromethat is placed on a transparent region of a second layer mask 30. It isunderstood that the second reference marks are not placed near anydevice features in the second layer pattern area 23. In an alternativeembodiment in which the second layer mask is an attenuated oralternating phase shifting mask, the second reference marks arefabricated so that light passing through the marks is transmitted 180°out of phase with light that passes through an adjacent region of thesecond layer mask 30. In yet another embodiment, the second referencemarks may be clear regions on the second layer mask 30 that aresurrounded by chrome.

Referring to FIG. 7, in the exemplary embodiment, the second referencemarks are comprised of chrome on a transparent substrate. A portion 26of the second layer pattern area 23 is shown that includes the secondreference mark 21 c and a portion of a pattern feature 32. The patternfeature 32 is preferably at least 2 microns from the second referencemark 21 c. Similarly, all other pattern features (not shown) are atleast 2 microns from a second reference mark. Note that all secondreference marks have the same size and shape as the second referencemark 21 c. A second reference mark 21 c is preferably comprised of afirst pair of parallel chrome lines 34, 36 and a second pair of parallelchrome lines 35, 37 that are perpendicular to the lines 34, 36 and forman essentially square shape having corners P, Q, R, S. The length of oneside L between corners P and Q, for example, is about 40 microns. Thewidth w of each of the chrome lines 34-37 is about 2 microns. Region 23represents a transparent portion of the substrate 30. In general, firstand second reference mark placement depends upon the customer who willuse the final device or are positioned according to the mask designer orby the mask maker.

I An example is given in FIGS. 8-11 of how layer to layer overlay errorof a second layer pattern on a first layer pattern is determined. Layerto layer overlay error includes mask to mask overlay error and errorsfrom imperfect optics in the exposure tool during the patterningprocess. Mask to mask overlay error may be determined separately asdescribed in the second embodiment.

Referring to FIG. 8, the substrate 40 with the first layer 42 that has afirst pattern with a first reference mark comprised of openings 43, 44is coated with a second photoresist layer 45 and exposed with radiation38 that is usually one or more wavelengths between about 10 nm and 450nm. Optionally, an electron beam or ion beam exposure may be used topattern the second photoresist layer 45. The second photoresist layer 45fills the openings 43, 44 and openings 47, 48 (not shown) and preferablyhas a uniform thickness on the first layer 42. The cross-sectional viewof the second layer mask 30 is shown as is generated by thecross-section A-A′ in FIG. 7.

In the exemplary embodiment, the chrome lines 35, 37 from a secondreference mark 21 c in the second layer mask 30 are aligned over a firstalignment mark 11 c (openings 43, 44) in the first layer 42. Alsopictured is the pattern feature 32 and the transparent substrate 31 onwhich a chrome second layer pattern is formed. In an alternativeembodiment, the second reference marks including the second referencemark 21 c are clear openings surrounded by chrome on the second layermask 30. Optionally, the second layer mask 30 may be phase shifting inwhich the second reference marks transmit light that is 180° out ofphase with light transmitted through adjacent portions of the secondlayer mask.

Referring to FIG. 9, the positive tone second photoresist 45 istypically subjected to a post-expose bake step and is then developedwith an aqueous base solution to selectively remove portions of thesecond photoresist layer 45 that were exposed radiation 38. As a result,the pattern feature 45 a and lines 46 a, 46 b are formed in the secondphotoresist layer. Other portions of the second layer pattern and othersecond reference marks within the second pattern layer area 23 on thesecond layer mask 30 are also exposed by radiation 38. The resultingsecond layer pattern in the second photoresist layer 45 is not picturedin order to simplify the drawing. In the alternative embodiment wherethe second reference marks are clear regions on the second layer mask30, a negative tone photoresist is exposed and developed to form lines46 a, 46 b.

As described previously, the first layer mask 20 may be used to print afirst reference mark comprised of lines 43 a, 44 a in the first layer42. The second layer mask 30 may be employed to print lines 46 a, 46 bin a second photoresist layer 45 in which the lines 46 a, 46 b arepositioned between lines 43 a, in the first layer 42. Alternatively, afirst reference mark may be comprised of spaces in the first layer 42and a second reference mark may be comprised of spaces in the secondlayer 45.

Referring to FIG. 10, a top-down view is provided of the portion 50 ofthe substrate 40 in FIG. 9 in which a second photoresist layer has beenpatterned over a first layer 42. The first reference mark comprised ofthe openings (trenches) 43, 44, 47, 48 in the first layer 42 isrepresented by the large dashed lines and has a center point B atcoordinates (x₁, y₁) which is midway between the openings 43, 44 andmidway between the openings 47, 48. The second reference mark that iscomprised of the second photoresist lines 46 a-46 d has a center point Cat coordinates (x₂, y₂) which is equidistant from the four lines 46 a-46d. The trenches 43, 44, 47, 48 have a length L2 and a width W2 that areabout 20 microns and about 2 microns, respectively, while the secondreference mark which is comprised of the second photoresist lines 46a-46 d has a length L3 of about 10 microns and a width W3 of about 0.5microns. The exact size of the first and second reference marks is notcritical so long as the first and second reference marks are easilyrecognized when a patterned substrate is viewed top-down with a CD-SEM.

In an ideal situation, center point C is overlaid exactly on centerpoint B. However, center point C is usually offset from center point Bby a distance in the y direction (y₂-y₁) and by a distance in the xdirection (x₂-x₁) because of aberrations in the optics of the exposuretool and due to mask to mask overlay error. The magnitude Of (y₂-y₁) and(x₂-x₁) is called layer to layer overlay error. Layer to layer overlayerror is preferably recorded not only for the second reference mark 21 coverlay on the first reference mark 11 c, but also for second referencemark 21 b overlay on first reference mark 11 b, second reference mark 20b overlay on first reference mark 10 b, and for second reference mark 20c overlay on first reference mark 10 c.

In an example where there is only one exposure field per substrate 40and four second reference marks 20 b, 20 c, 21 b, 21 c in the secondphotoresist layer 45 which are overlaid on four first reference marks 10b, 10 c, 11 b, 11 c, respectively, in a first layer 42, then four setsof measurements are taken with a CD-SEM. In addition to measuring oneset of (x, y) coordinates for the center point C of second referencemark 21 c and the center point B of first reference mark 11 c asmentioned previously, three other sets of (x, y) coordinates aremeasured for the remaining three matched pairs of first and secondreference marks which are (20 b, 10 b), (20 c, 10 c), and (21 b, 11 b).The (x, y) coordinates for the center points (not shown) of firstreference marks 10 b, 1Oc, and 1 b are (x₅, y₅), (x₇, y₇), and (x₃, y₃),respectively. The (x, y) coordinates for the center points (not shown)of the second reference marks 20 b, 20 c, and 21 b are (x₆, y₆),(x₈-y₈), and (x₄, y₄), respectively.

Referring to FIG. 11 a, a grid 90 which is divided into four equalsquares 91, 92, 93, 94 is overlaid on the second layer pattern (notshown) on substrate 40. In this case, the matched pairs of first andsecond reference marks (20 b, 10 b), (20 c, 10 c), (21 b, 11 b), and (21c, 11 c) fall inside the squares 91, 93, 92, and 94, respectively.

Referring to FIG. 11 b, a table is generated in which the x and ydeviations are inserted for each of the matched pair of first and secondreference marks according to the grid 90 in FIG. 11 a. The x deviationbetween the center points for first reference mark 10 b and for secondreference mark 20 b is represented by (x₆-x₅) and is placed in row a₁under column b₁. In a similar fashion, the x deviation between thecenter points for first reference mark 10 c and for second referencemark 20 c is represented by (x₈-x₇) and is placed in row a₁ under columnb₁. The x deviation between the center point for first reference mark 11b and for second reference mark 21 b is (x₄-x₃) and is inserted in rowa₂ under column b₁. Finally, the fourth x deviation (x₂-x₁) aspreviously described is inserted in row a₂ under column b₂. Similarly,the values (y₈-y₇), (y₆-y₅), (y₄-y₃), and (y₂-y₁) for the correspondingy deviations are placed in appropriate row and column positions. Theresulting x and y deviations (offset values) are typically expressed interms of nanometers (nm) and may be a negative or a positive number.

Once all the x and y deviations for the first and second reference markshave been entered into the table, the data is inputted into a correctionalgorithm in a computer. The algorithm automatically calculatesadjustments such as changes to magnification, field rotation, x and ystage scale, orthogonality, and offset translation in the exposuresettings that will enable a more precise placement of the second layermask 30 over a first layer pattern in first layer 42 in subsequentexposures on other substrates.

In the embodiment where the first layer pattern in the first layer maskand the second layer pattern in the second layer mask are stepped acrossa substrate during the patterning steps to produce a plurality ofexposure fields, each first reference mark and each second referencemark is reproduced a plurality of times in the first layer and secondphotoresist layer, respectively. Furthermore, a plurality of referencemarks may be placed inside the inner pattern area on the first layermask and inside the inner pattern area on the second layer mask.Accordingly, a larger grid that is “m” rows by “n” columns, for example,may be selected that overlays essentially the entire substrate. Notethat the area of one square within a grid may be smaller than the sizeof an exposure field and that a plurality of reference marks may fallinside each square within the grid. Therefore, a plurality of CD-SEMmeasurements are needed to obtain the (x,y) coordinates of the centerpoint for each first and second reference mark in the first layer andsecond photoresist layer, respectively. Obviously, this procedure ispreferably automated to move from one reference mark site on a substrateto another in order to achieve a faster determination of x and ydeviations. As before, the results are tabulated so that the data may befed into a correction algorithm to make the necessary adjustments forsubsequent exposures. It is understood that when a plurality ofmeasurements are taken within a grid square, the results may be averagedfor the measurements so that one x deviation value and one y deviationvalue are entered into the corresponding row and column of the errortable.

Those skilled in the art will appreciate that more than one exposuretool is typically required for exposing a group of substrates with afirst layer mask and a second layer mask. For example, a first tool maybe paired with the first layer mask and the second layer mask forprocessing one lot of wafers and a second tool may be paired with thefirst layer mask and the second layer mask for processing another lot ofwafers. Thus, the method of the first embodiment is preferably performedat least once for each combination of exposure tool, first layer mask,and second layer mask. Depending on the alignment stability of theexposure tool, the method may be repeated on a regular basis to trackthe optimum exposure settings for the exposure tool.

Referring to FIG. 12, a third mask 50 is used to expose the substrate 40having a patterned layer 45 on its surface in order to remove the secondreference marks 20 b, 20 c, 21 b, 21 c that are not wanted in the finaldevice. Mask 50 has a transparent outer region 52 and a chrome region 51whose shape and size corresponds to combined regions 23, 24 on thesecond layer mask 30. The chrome region 51 is further comprised of smallopenings 53, 54, 55, 56 that are slightly larger than the secondreference marks 20 b, 20 c, 21 b, 21 c and are located in positions onmask 50 which have the same (x, y) coordinates as the second referencemarks 20 b, 20 c, 21 b, 21 c on the second layer mask 30. For instance,when the third mask 50 is aligned over the second layer mask 20, thenthe opening 53 would overlay on the second reference mark 20 b.

In the alternative embodiment where a plurality of second referencemarks are located on the inner pattern area 23 of the second layer mask30, then there are a plurality of openings in the third mask 50 in whichone opening is matched with a second reference mark with the same (x,y)coordinates on the inner pattern area 23 of the second layer mask 30.Note that second reference marks in the outer region 25 of the secondlayer mask 30 are not printed in the photoresist layer 45.

Referring to FIG. 13, a portion 60 of the chrome region 51 on the thirdmask 50 is shown that is identical in shape and size to the portion 26of the mask 30 depicted in FIG. 6. The transparent opening 56 isslightly larger than the second reference mark 21 c in FIG. 6 to allowfor some overlay error. The shape and size of each of the openings 53,54, 55, 56 may vary but must be large enough to expose an entire secondreference mark in the second photoresist layer 45 but not so large as toexpose part of an adjacent pattern feature.

Referring to FIG. 14, the substrate 40 with a second patterned layercomprised of the second reference mark 21 c (lines 46 a-46 d) on thefirst patterned layer 42 is exposed with radiation 61 through a portion60 of the third mask 50. Chrome regions 51 prevent radiation 61 fromexposing the portions of photoresist layer 45 containing patternfeatures. The opening 56 allows radiation to expose second referencemark 21 c consisting of lines 46 a, 46 c. Lines 46 b, 46 d (not shown)are also exposed through the opening 56. The second reference marks 20b, 20 c, 21 b are simultaneously exposed through openings 53, 54, 55,respectively. Following exposure, the substrate is developed with anaqueous base solution to selectively remove lines 46 a-46 d. The devicepattern that includes the pattern feature 45 a remains on the firstlayer 42. During the same developer treatment, all other secondreference marks formed by exposing the second layer mask 30 withradiation 38 as depicted in FIGS. 8-9 are removed to leave only thedesired second layer pattern.

Once the second reference marks are removed, the second photoresistlayer 45 is processed by conventional means which typically involvesusing the patterned second photoresist layer 45 as a mask while etchingthe exposed portions of the first layer 42 and then using a wet or drystrip process to remove any remaining portions of the second photoresistlayer 45. For example, the first pattern may be comprised of a via andthe second layer pattern may be comprised of a trench that is formedabove the via.

The advantage of this method is that second reference marks may beplaced in a second layer pattern to improve the overlay of the secondlayer pattern on a first layer pattern and may then be removed in ordernot to interfere with final device performance. The overlay of thesecond layer pattern on the first layer pattern is improved insubsequent exposures on other substrates. For example, the method of thefirst embodiment could be performed on a first wafer in a multiple waferlot. After a layer to layer error map is generated according to thepreviously described method for the first wafer and the data is inputtedinto a correction algorithm to make adjustments in exposure settings,other wafers in the lot can then be exposed with the first layer maskand then the second layer mask. As a result, a smaller placement errorwill be achieved for printing the second layer pattern over the firstlayer pattern on other wafers in the same lot and in subsequent lots.

In a second embodiment, the mask to mask error contribution to the layerto layer overlay error is determined with the use of a Leica LMS IPROtool or an equivalent. The metrology tool uses reflected non-coherentlight to determine the (x,y) coordinates of a feature such as a chromereference mark on a mask. Thus, the position of each of the firstreference marks on the first layer mask 20 and each of the secondreference marks on the second layer mask 30 is obtained without exposinga substrate.

Referring to FIG. 16, in the embodiment where the first reference marksand the second reference marks each form a 4×4 array, the center pointpositions (x and y coordinates) of all the first reference marks 9 a-9d, 10 a-10 d, 1 a-11 d, 12 a-12 d on the first layer mask 20 and thecenter point locations (x and y coordinates) of all the second referencemarks 19 a-19 d, 20 a-20 d, 21 a-21 d, 22 a-22 d on the second layermask 30 are determined by a Leica LMS IPRO or equivalent. An error tablecomprised of 4 rows and 4 columns is generated by obtaining the x and ydeviations for each matching pair of the aforementioned center pointsand entering the values in the appropriate column and row of the table.For example, the (x,y) offset values for the second reference mark 19 awith respect to first reference mark 9 a is entered in row m₁ undercolumn n₁. Similarly, the (x,y) offset values for the second referencemark 20 a with respect to the first reference mark 10 a are entered inrow m₂ under column n₁. The remaining (x,y) offset values are placed inthe corresponding column and row.

An algorithm is then used to calculate the appropriate adjustments inexposure tool parameters that will minimize the mask to mask errorcontribution to the resulting layer to layer overlay error when thesecond layer mask is used to pattern a photoresist layer coated on asubstrate that has been patterned with the first layer mask.

In an alternative embodiment, the first layer mask is comprised of aplurality of first reference marks located on the inner pattern area andoutside the forbidden area. Likewise, the second layer mask is comprisedof a plurality of second reference marks located on the inner patternarea and outside the forbidden area. Furthermore, each of the secondreference marks is matched with a first reference mark at a similar(x,y) coordinate as described in the first embodiment. When an “m”×“n”array of first and second reference marks is placed on the first layermask and second layer mask, respectively, then the Leica LMS IPRO orequivalent is used to determine the x and y deviations for each matchedpair of reference marks and a mask error table with “m” rows and “n”columns is generated. The correction algorithm then makes adjustments tothe exposure tool settings for subsequent exposures with the secondlayer mask.

An example of the improved overlay accuracy provided by the method ofthe second embodiment will now be described with reference to FIGS. 17and 18. FIG. 17 depicts a conventional mask 70 that has reference marks71, 72, 73, 74 located outside the inner pattern area 75 and outside theforbidden area 76 in an outer region 77. There are also two features 78,79 in the second layer mask pattern within the inner pattern area 75whose location in a patterned photoresist layer can be monitored tocheck the effectiveness of an overlay correction. A Leica LMS IPRO orequivalent determines the (x,y) coordinates for the reference marks 71,72, 73, 74 and a matching set of reference marks in a first layer mask(not shown). The x and y deviations of the reference marks 71, 72, 73,74 with respect to the matching set of reference marks in the firstlayer mask is inputted into an algorithm which calculates the optimumexposure settings needed to minimize layer to layer error for a secondlayer pattern on a first layer pattern. The second layer mask 70 is usedto expose a photoresist layer on a first layer pattern in a substrate(not shown).

In the example provided in FIG. 17, calculations derived from thealgorithm indicate that an x-magnification correction of 0.8 ppm duringexposure of the second layer mask is needed in order to reduce thex-deviation or residue error from 100 nm to 4 nm for overlaying thesecond layer pattern in a photoresist layer on the first layer pattern.However, when this adjustment is made in the patterning step, theresidue error of the printed features 78, 79 which had been 50 nmwithout correcting for mask to mask error is increased to 82 nm afterapplying the mask to mask error corrections. Therefore, correcting amask to mask error based on measurements of reference marks outside theforbidden area may have a detrimental effect on the layer to layeroverlay of actual features in the device pattern as observed in thiscase.

Referring to FIG. 18, the inventors have found that by includingreference marks inside the device pattern in the measurements used todetermine (x,y) deviations for the mask to mask error table, a positiveimpact is achieved in reducing layer to layer overlay of a second layerpattern on a first layer pattern. In one embodiment, two additionalreference marks are inserted on the first layer mask and on the secondlayer mask at similar locations. In the example in FIG. 18, a secondreference mark 80 is added to the modified second layer mask 70 a nearpattern feature 78 and a second reference mark 81 is added near patternfeature 79. A matching pair of first reference marks are added to thefirst layer mask (not shown) at similar (x,y) coordinates. The sequenceof obtaining the Leica LMS IPRO measurements for six second referencemarks 71, 72, 73, 74, 80, 81 and their matching first reference marks onthe modified second layer mask 70 a, inputting the (x,y) offsets into amask error table, and calculating optimized exposure settings with analgorithm is performed.

The modified second layer mask 90 and the optimized exposure settingsare used to expose a photoresist layer on a substrate that has beenpatterned with the first layer mask and its six first reference marks.In this case, the algorithm calls for an x-magnification correction of0.5 ppm to reduce the x-deviation or residue error from 100 nm to 40 nmfor overlaying the second layer pattern on the first layer pattern. Whenthis adjustment is made, the resulting second layer pattern has a moreaccurate overlay on the first layer pattern since the residue error fordevice features 78, 79 is reduced to 70 nm rather than 82 nm aspreviously described for the method with conventional reference marks.

The second embodiment further provides for a method of removing a firstreference mark from a first layer mask and a second reference mark froma second layer mask. Although a method is described with regard to afirst layer mask, the method also applies to a second layer mask. First,a photoresist layer (not shown) which preferably has a positive tonecomposition is coated on the first layer mask. A pattern generatormachine is employed to direct an electron beam or a laser beam atselected portions of the photoresist layer that correspond to the (x,y)coordinates of the first reference marks on the first layer mask. Theelectron beam or laser beam exposes an area at each (x,y) coordinatethat is slightly larger than the underlying first reference mark toallow for some placement error. It is important not to expose a portionof the photoresist layer that is so large as to overlap a portion of thepattern features on the first layer mask. Therefore, if a plurality offirst reference marks is formed in an “m”×“n” array on the inner patternarea of the first layer mask, a plurality of clear regions is formed inan “m”×“n” array in the photoresist layer at the same (x,y) coordinatesas the plurality of first reference marks. The clear regions are formedby developing the exposed photoresist layer by a conventional method andremoving the exposed portions thereof. Each clear region has a size thatcompletely uncovers a first reference mark.

Note that a first reference mark which is located in an outer regionoutside the forbidden area does not have to be removed since these firstreference marks are not printed when the mask is used in a subsequentexposure. The remaining portions of the photoresist layer then functionas a mask while a wet or dry etch process is employed to remove theexposed first reference marks. Finally, the photoresist is stripped by aconventional method and the modified second layer mask is ready forpatternwise exposures to form a second layer pattern in a secondphotoresist layer on a substrate having a first patterned layer. Theadvantage of this method is that a patterned second photoresist layerdoes not have to be exposed with a third mask as explained previouslywhich is convenient when a plurality of substrates with a second layerpattern are processed on a regular basis.

While this invention has been particularly shown and described withreference to, the preferred embodiment thereof, it will be understood bythose skilled in the art that various changes in form and details may bemade without departing from the spirit and scope of this invention.

1. A method for determining mask to mask error for improving the overlayof a second layer pattern on a first layer pattern formed in asubstrate, said first layer pattern is formed by exposing a firstphotoresist layer through a first layer mask and transferring the firstlayer pattern into a substrate and the second layer pattern is formed byexposing a second photoresist layer with a second layer mask,comprising: (a) providing a first layer mask comprised of an innerpattern area, an outer region, and a plurality of first reference marksformed within the inner pattern area and on the outer region, said firstreference marks each have a center point with (x,y) coordinates; (b)providing a second layer mask comprised of an inner pattern area, anouter region, and a plurality of second reference marks each formedwithin the inner pattern area and on the outer region wherein eachsecond reference mark is matched with a first reference mark and has acenter point with the same (x,y) coordinates as a matching firstreference mark on the first layer mask; (c) measuring the (x,y)coordinates for the center points of the first reference marks andsecond reference marks and determining the offset values in terms of xand y deviations for each matched pair of first and second referencemarks; and (d) inputting the offset values into an error table andapplying a correction algorithm to the data in the error table whichcalculates adjustments in exposure tool settings that are subsequentlyused to expose a second layer pattern with the second layer mask on afirst layer pattern in a substrate that has been formed with the firstlayer mask.
 2. The method of claim 1 wherein said first reference markson the first layer mask and said second reference marks on the secondlayer mask are clear regions that are surrounded by chrome and the firstlayer mask and second layer mask are binary masks.
 3. The method ofclaim 1 wherein said first reference marks on the first layer mask andsaid second reference marks on the second layer mask are comprised ofchrome that is surrounded by clear regions and the first layer mask andsecond layer masks are binary masks.
 4. The method of claim 1 whereinsaid first reference marks on the first layer mask and said secondreference marks on the second layer mask are regions that transmit lightwhich is 180° out of phase with light that is transmitted throughadjacent regions and the first layer mask and second layer mask arephase shifting masks.
 5. The method of claim 1 wherein each of saidfirst reference marks on the first layer mask and second reference markson the second layer mask is comprised of a first pair of parallel linesoriented along an x-axis and a second pair of parallel lines orientedalong a y-axis that intersect with said first pair of parallel lines toform a square shape and wherein said first and second pair of parallellines have a length and a width.
 6. The method of claim 5 wherein afirst reference mark on the first layer mask is comprised of parallellines having a width of about 8 microns and a length of about 80microns.
 7. The method of claim 5 wherein a second reference mark on thesecond layer mask is comprised of parallel lines having a width of about2 microns and a length of about 40 microns.
 8. The method of claim 5wherein said all of said first reference marks on the first layer maskhave the same length and width and wherein all of the second referencemarks on the second layer mask have the same length and width.
 9. Themethod of claim 1 wherein a Leica LMS IPRO metrology tool or equivalentis used to measure the (x,y) coordinates for the center point of eachfirst reference mark and each second reference mark.
 10. The method ofclaim 1 wherein the plurality of first reference marks are formed in a“m”×“n” array on the first layer mask and the plurality of secondreference marks are formed in a “m”×“n” array on the second layer maskand wherein said error table is comprised of “m” rows and “n” columns.11. The method of claim 1 further comprised of removing the secondreference marks on the second layer mask after the correction algorithmis applied by a process comprising: coating said second layer mask witha third photoresist layer and using a pattern generator machine toexpose portions of the third photoresist layer at regions correspondingto the (x,y) coordinates of the second reference marks on the secondlayer mask; removing the exposed portions of said third photoresistlayer; performing a dry or wet etch to remove the second reference markson the second layer mask; and stripping the third photoresist layer. 12.The method of claim 1 further comprised of removing the first referencemarks on the first layer mask after the correction algorithm is appliedby a process comprising: coating said first layer mask with a thirdphotoresist layer and using a pattern generator machine to exposeportions of the third photoresist layer at regions corresponding to the(x,y) coordinates of the first reference marks on the first layer mask;removing the exposed portions of said third photoresist layer;performing a dry or wet etch to remove the first reference marks on thefirst layer mask; and stripping the third photoresist layer.